MACOM Sets New Benchmark for GaN Performance and Efficiency with New 500W GaN-on-Si Power Transistor for L-Band Airport Surveillance Radar (ASR) Applications

- Lowell, Massachusetts, USA.

MACOM Technology Solutions Inc. today announced the newest entry in its GaN-on-Si power transistor portfolio for pulsed L-Band radar systems targeted for airport surveillance radar (ASR) applications at 1.2 to 1.4 GHz. Delivering industry-leading efficiency at peak pulse power levels up to 500W, the new MAGX-101214-500 is expected to outperform premium-priced GaN-on-SiC-based transistors, and far exceed the performance, efficiency and power density of legacy LDMOS-based devices.

MACOM’s new MAGX-101214-500 enables customers to scale to higher power levels across a host of ASR applications, delivering 500W output power and greater than 70% power efficiency under pulsed conditions at 50V operation. Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimize circuit size, MAGX-101214-500 transistors help to enable rugged, compact radar systems underpinned with efficient, simplified cooling and power supply architectures.

The MAGX-101214-500 builds on the established success of MACOM’s comprehensive portfolio of GaN-on-Si power transistors, which have demonstrated field-proven reliability in harsh environmental conditions. To date, over one million MACOM GaN-on-Si devices have been shipped to customers around the world.

“The continued expansion of MACOM’s GaN-on-Si product portfolio enables customers to address an ever-widening range of RF power requirements while achieving performance profiles that meet and exceed GaN-on-SiC, at significantly less cost at scaled volume production levels,” said Greg French, Senior Product Manager, RF Power, at MACOM. “Our proven technology leadership in GaN-on-Si combined with our decades-long heritage in civil and defense radar are among the many factors fueling our innovation in these important markets, as evidenced by the new MAGX-101214-500.”

MACOM showcases the MAGX-101214-500 at European Microwave Week (EuMW), October 10-12, Nuremberg, Germany, at MACOM booth #200. Products are sampling to customers today, with production release targeted for 1H 2018. For more information on MACOM’s technology leadership in GaN, visit

Macom MAGX-101214-500 GaN-on-Si power transistor for Airport Surveillance Radar applications

Macom MAGX-101214-500 GaN-on-Si power transistor for Airport Surveillance Radar applications

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